Description
FDS1010 – Silicon Photodiode, 65 ns Rise Time, 350 – 1100 nm, Active Area 10 mm x 10 mm
Silicon photodiode
1 model: FDS1010;
2 photosensitive surface: 10× 10mm;
3 wavelength response range: 400nm ~ 1100nm;
4 rising / falling edge: 45ns (5V bias);
5 node capacitance: 432pF;
6 package: ceramics.
Download the datasheet.
Silicon Photodiode FDS1010 Datasheet
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