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Si photodiode S2386-18L hamamatsu Photodiodes

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Si photodiode S2386-18L hamamatsu Photodiodes

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Description

Si photodiode S2386-18L hamamatsu Photodiodes

For visible to near IR, general-purpose photometry

Features
– High sensitivity in visible to near infrared range
– Low dark current
– High reliability
– Superior linearit

Photosensitive area 1.1 × 1.1 mm
Number of elements 1
Package Metal
Package category TO-18, with lens
Cooling Non-cooled
Reverse voltage (max.) 30 V
Spectral response range 320 to 1100 nm

Peak sensitivity wavelength (typ.) 960 nm
Photosensitivity (typ.) 0.6 A/W
Dark current (max.) 2 pA
Rise time (typ.) 0.4 μs
Terminal capacitance (typ.) 140 pF
Noise equivalent power (typ.) 6.8×10-16 W/Hz1/2

Si photodiode S2386-18L hamamatsu Photodiodes