Description
Si photodiode S1227-1010BQ hamamatsu Photodiodes
For UV to visible, precision photometry; suppressed IR sensitivity
Features
– High UV sensitivity (quartz window type): QE＝75 % (λ=200 nm)
– Suppressed IR sensitivity
– Low dark current
Photosensitive area 10 × 10 mm
Number of elements 1
Package Ceramic
Cooling Non-cooled
Reverse voltage (max.) 5 V
Spectral response range 190 to 1000 nm
Peak sensitivity wavelength (typ.) 720 nm
Photosensitivity (typ.) 0.36 A/W
Dark current (max.) 50 pA
Rise time (typ.) 7 μs
Terminal capacitance (typ.) 3000 pF
Noise equivalent power (typ.) 8×10-15 W/Hz1/2
Measurement condition Typ. Ta=25 ℃, Photosensitivity: λ=720 nm, Dark current: VR=10 mV, Terminal capacitance: VR=0 V, f=10 kHz, unless otherwise noted
