Description

Hamamatsu Si photodiode S1337-66BQ

For UV to IR, precision photometry

Features
-High UV sensitivity: QE 75% (λ=200 nm)
-Low capacitance

Photosensitive area 5.8 × 5.8 mm
Number of elements 1
Package Ceramic
Cooling Non-cooled
Reverse voltage (max.) 5 V
Spectral response range 190 to 1100 nm
Peak sensitivity wavelength (typ.) 960 nm
Photosensitivity (typ.) 0.5 A/W
Dark current (max.) 100 pA
Rise time (typ.) 1 μs
Terminal capacitance (typ.) 380 pF
Noise equivalent power (typ.) 1.3×10-14 W/Hz1/2

Hamamatsu Si photodiode S1337-66BQ