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hamamatsu S1336-44BQ Si photodiode

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hamamatsu S1336-44BQ Si photodiode

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Description

hamamatsu S1336-44BQ Si photodiode

UV to near IR for precision photometry

Features
– High sensitivity in UV range
– Low capacitance
– High reliability

Photosensitive area 3.6×3.6 mm
Number of elements 1
Package Metal
Package category TO-5
Cooling Non-cooled
Reverse voltage (max.) 5 V
Spectral response range 190 to 1100 nm
Peak sensitivity wavelength (typ.) 960 nm
Photosensitivity (typ.) 0.5 A/W
Dark current (max.) 50 pA
Rise time (typ.) 0.5 μs
Terminal capacitance (typ.) 150 pF

 

hamamatsu S1336-44BQ Si photodiode