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Hamamatsu InGaAs PIN photodiode G12180-020A

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Hamamatsu InGaAs PIN photodiode G12180-020A

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Description

Hamamatsu InGaAs PIN photodiode G12180-020A

Photosensitive area: φ2 mm

Features
– Low noise, low dark current
– Low terminal capacitance
– Photosensitive area: φ2 mm
– Low noise

Photosensitive area φ2.0 mm
Number of elements 1
Package Metal
Package Category TO-5
Cooling Non-cooled
Spectral response range 0.9 to 1.7 μm
Peak sensitivity wavelength (typ.) 1.55 μm
Photosensitivity (typ.) 1.1 A/W
Dark current (max.) 7.5 nA
Cutoff frequency (typ.) 13 MHz
Terminal capacitance (typ.) 250 pF
Noise equivalent power (typ.) 2.8×10-14 W/Hz1/2

 

Hamamatsu InGaAs PIN photodiode G12180-020A