Description

Hamamatsu InGaAs PIN Photodiode G12180-005A G12180-010A G12180-020A

BeamQ Hamamatsu InGaAs PIN Photodiode G12180-005A G12180-010A G12180-020A

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Hamamatsu InGaAs PIN Photodiode G12180 datasheet

Photosensitive area: φ1 mm

Features
– Low noise, low dark current
– Low terminal capacitance
– Photosensitive area: φ1 mm
– Low noise

Photosensitive area φ1.0 mm
Number of elements 1
Package Metal
Package Category TO-18
Cooling Non-cooled
Spectral response range 0.9 to 1.7 μm
Peak sensitivity wavelength (typ.) 1.55 μm
Photosensitivity (typ.) 1.1 A/W
Dark current (max.) 4 nA
Cutoff frequency (typ.) 60 MHz
Terminal capacitance (typ.) 55 pF
Noise equivalent power (typ.) 1.4×10-14 W/Hz1/2
Measurement condition Typ. Tc=25 ℃, unless otherwise noted, Photosensitivity: λ=λp, Dark current: VR=5 V, Cutoff frequency: VR=5 V, RL=50 Ω, -3 dB, Terminal capacitance: VR=5 V, f=1 MHz