Description

Semiconductor Devices 780nm Free-Space Acousto-Optic Modulator

General Specifications:
Material:SiO2
Wavelength: 780nm
Average optical power:5W
Peak (pulse) optical power:40kW
Ultrasonic sound velocity:4200m/s
Diffraction efficiency: 75%
Insertion loss:2dB
Extinction Ratio: 45dB
Return loss: 40dB
Rising time: 8ns
frequency:80MHz-200MHz
Frequency shift:+/-200MHz
Pulse duration:20ps
RF power:2.5W
Voltage standing wave ratio:1.5:1
input resistance:50Ω
Device interface:SMA
Operating temperature: -20~+60℃
storage temperature:-30~+70℃