Description

Si photodiode S1227-66BR hamamatsu

For UV to visible, precision photometry; suppressed IR sensitivity

Features
– Resin potting type
– Suppressed IR sensitivity
– Low dark current

Photosensitive area 5.8×5.8 mm
Number of elements 1
Package Ceramic
Cooling Non-cooled
Reverse voltage (max.) 5 V
Spectral response range 340 to 1000 nm
Peak sensitivity wavelength (typ.) 720 nm
Photosensitivity (typ.) 0.43 A/W
Dark current (max.) 20 pA
Rise time (typ.) 2 us
Terminal capacitance (typ.) 950 pF
Noise equivalent power (typ.) 4.2×10-15 W/Hz1/2

Si photodiode S1227-66BR hamamatsu